Vishay’s Fourth-Gen 600 V E Series Power MOSFET Lowers Conduction Losses, Increases Efficiency

By WPG AmericasFebruary 20, 2017

Vishay Intertechnology has introduced the first device in their fourth generation of the 600 V E Series power MOSFETs. The Vishay Siliconix n-channel SiHP065N60E features the industry’s lowest gate charge times on-resistance, a key FOM for 600 V MOSFETs used in power conversion applications.

Product Benefits:

  • Ultra-low on-resistance and gate charge reduce conduction and switching losses to save energy
  • Gate charge times on-resistance figure of merit (FOM) of 2.8 Ω*nC
  • Low effective output capacitances Co(er) and Co(tr) improve switching performance
  • Offered in the TO-220AB package
  • RoHS-compliant, halogen-free
  • Designed to withstand overvoltage transients in the avalanche mode with guaranteed limits through 100 % UIS testing

Market areas include applications in telecom, industrial and enterprise power supplies. The upcoming introduction of the 600 V E Series family addresses the need for efficiency and power density improvements in the first stages of power system architecture.

For more information about the 600 V E series and the Siliconix n-channel SiHP065N60E, download the Data Sheet and contact a WPGA Specialist.