Samsung's 3D Technologies That Have Taken Microchips to a Whole New LevelOctober 19, 2016
The major technological advancements transforming the semiconductor industry is largely driven by devices that demand faster, lighter, and smarter microchips with less power consumption. Samsung Electronics, a global pioneer in semiconductor and electronic components, is among the first few to implement three-dimensional concepts at multiple levels of the semiconductor engineering structure.
As traditional chip designs based on 2D configurations gradually phase out and approach their physical limits, Samsung’s three-dimensional technologies lead the industry with significant benefits for designers, OEMs, and the industry at large.
Here's how Samsung's 3D semiconductor technologies handle critical challenges in meeting the demanding market requirements -
The cutting-edge 14-nanometer (nm) FinFET technology, made available by Samsung at the end of 2014, has since then set the industry benchmark for storage with its superior performance and functionalities. The device’s 3D structure remarkably minimizes data leakage while leveraging exceptional power management capabilities. Key technology features include -
- Scalability support by 78nm CPP and single-diffusion break.
- Industry's smallest SRAM bit cell in the 14nm node.
- Incorporation of non-SAC process considering smaller Ceff.
Launched in 2013, Samsung's flagship V-NAND utilizes the company's proprietary vertical cell structure and interconnect process technology to deliver an industry-leading density output of 128 gigabits (Gb) in a single chip.
Three-dimensional V-NAND microchips are capable of stacking cells up to 100 layers while scaling twice the cell density of any 2D planar NAND-flash in the 20nm-class. Built on 3D Charge Trap Flash (CTF) technology, it vertically layers the memory cells in three-dimensional stacks, allowing higher cell density for improved handling and storing of heavy-workload data center applications.
Samsung’s 'Through Silicon Via' (TSV) DDR4 memory, designed to power enterprise servers and data centers, is lauded as the industry's most energy efficient, high-capacity, high-speed DRAM modules ever made.
Founded on registered dual inline memory module (RDIMM), the latest 128GB TSV DDR4 memory follows the company's high-performance legacy of TSV 64GB DDR4 DRAM for ultra-high capacity memory requirements at the enterprise level.
The new 3D RDIMM module includes 144 DDR4 chips arranged into 36 4GB DRAM packages, each comprising of four 20nm-based 8Gb chips assembled together with state-of-the-art Through Silicon Via (TSV) packaging technology. Samsung’s 128GB 3D TSV DDR4 memory breathes life into next-generation computing systems and high-resolution graphics cards.
“Samsung is reinforcing its competitive edge in the DRAM market with its new state-of-the-art solution using its 3D TSV technology, while driving growth in the global DRAM market,” said Jeeho Baek, vice president, memory marketing, Samsung Electronics. “By introducing highly energy-efficient DDR4 modules assembled with 3D TSV, we’re taking a big step ahead of the mainstream DDR4 market, which should dramatically expand with the expected introduction of next-generation CPUs in the second half of this year.”
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