Samsung 64-Layer V NAND Flash Memory and Market UpdateDecember 27, 2016
At Flash Memory Summit 2016, Samsung Electronics, a worldwide leader in memory technology, unveiled its newest 4th generation 64 layer Vertical NAND (V-NAND) flash memory, which is the “industry-first” and the most advanced ever of its kind, according to the chip maker.
The revolutionary 64-layer triple-level-cell V-NAND flash memory is designed to match the ever-increasing storage demands of big data networks, real-time analysis and cloud computing. It follows the roll out of 24, 32, and 48-layer NAND flash memory chips that Samsung has been mass producing since August 2013.
Samsung's latest 64-layer V-NAND flash storage solution is anticipated to contribute significantly in extremely data sensitive enterprise computing scenarios by accommodating blazing-speed information processing while improving the total cost of ownership (TCO).
The 4th Generation 64-layer V-NAND Leaves the Competition Behind by Stacking 30 Percent More Layers of Cell-arrays
Samsung’s 4th generation, 64-layer triple-level-cell V-NAND flash memory pushes the boundaries of NAND scaling, performance, and storage capacity to its ultimate limit. The cutting-edge flash memory, by stacking 64 layers of cell arrays, endorses Samsung’s technology dominance in three-dimensional NAND structure design and production, leveraging an industry-leading single-die density of 512 GB and an IO speed of up to 800 Mbps.
“With our 4th generation V-NAND technology, we can provide leading-edge differentiated values in capacity, performance and product dimensions, which will contribute to our customers achieving better TCO results,” said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. “We will continue to introduce more advanced V-NAND solutions and expand our flash business initiatives in maximizing a combination of performance and value.”
Market Update for Samsung's 4th Generation 64-layer 3D Flash Memory
Samsung plans to introduce the world’s first ever 64-Layer V-NAND flash memory by the fourth quarter of 2016. This essentially means Samsung can effectively put into effect a robust production yield of 80% for its new 64-layer V-NAND by the time its competitors can only reach the 48-layer 3D NAND production point.
The 4th generation 3D storage solutions will remarkably help the OEMs in offering end users a more responsive computing environment through faster, stylish, compact and portable computing devices.
"In the past, some global companies would get a hold of our products, do an analysis, buy necessary equipment, and after a couple of months of trial and error, come up with a product that has a synchronization rate of about 80%. Not anymore," stated Sun Kyu Park of the Memory Business Strategy Group at Samsung Electronics. "SSD products, in particular, our V-NAND flash memories, have a competitive advantage that is very hard for competitors to reconcile. Among other things, there is the proprietary state-of-the-art controller, and the low-power, high-capacity-ready software, that offer incomparable customer satisfaction on all fronts, from speed, to capacity, to energy savings,” Park added.
Strongly backed by an unparalleled development experience, Samsung has over the time widened the gap of competition by constantly infusing innovation into its memory products. The latest introduction of high-end, high-capacity, 64 layer Vertical NAND will further solidify the company's supremacy in the memory space in years to come.
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